for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 HMC719LP4 / 719lp4e gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz v04.0610 general description features functional diagram typical applications electrical specifcations, t a = +25c, rbias = 1.5k ohms* p arameter vdd = +3v vdd = +5v units m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 1.3 - 2.2 2.2 - 2.9 1.3 - 2.2 2.2 - 2.9 ghz gain 27 32 22 26.5 29 35 24 28 db gain variation o ver temperature 0.02 0.02 0.02 0.02 db/ c noise f igure 1.0 1.3 1.3 1.6 0.95 1.2 1.25 1.6 db i nput r eturn l oss 16 13.5 17.5 16.5 db o utput r eturn l oss 10.5 9.5 13.5 11.5 db o utput p ower for 1 db compression ( p 1db) 12.5 15.5 12.5 15.5 18 21.5 18 21.5 dbm s aturated o utput p ower ( p sat) 18 18.5 23 23 dbm o utput third o rder i ntercept ( ip 3) 32 31 39 39 dbm total s upply current ( i dd) 187 220 187 220 272 315 272 315 ma * r bias resistor sets current, see application circuit herein, vdd = vdd1 = vdd2 the h m c719 lp 4( e ) is a gaas p h em t mmi c l ow noise amplifer that is ideal for cellular/3g and l t e / w i m ax/4g basestation front-end receivers operating between 1.3 and 2.9 ghz. the amplifer has been optimized to provide 1.0 db noise fgure, 34 db gain and +39 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent and the l na requires minimal external matching and bias decoupling components. the h m c719 lp 4( e ) shares the same package and pinout with the h m c718 lp 3( e ) 600 - 1400 m hz l na. the h m c719 lp 4( e ) can be biased with +3v to +5v and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the l na for each application. noise f igure: 1.0 db gain: 34 db o utput ip 3: +39 dbm s ingle s upply: +3v to +5v 50 o hm m atched i nput/ o utput 24 l ead 4x4 mm sm t p ackage: 16 mm 2 the h m c719 lp 4( e ) is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? access p oints ? test e quipment & m ilitary
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 input return loss vs. temperature [1] output return loss vs. temperature [1] broadband gain & return loss [1] [2] HMC719LP4 / 719lp4e v04.0610 gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz [1] vdd = 5v, r bias = 1.5k [2] vdd = 3v, r bias = 1.5k gain vs. temperature [2] gain vs. temperature [1] reverse isolation vs. temperature [1] -40 -30 -20 -10 0 10 20 30 40 0.5 0.8 1.1 1.4 1.7 2 2.3 2.6 2.9 3.2 3.5 vdd=5v vdd=3v frequency (ghz) response (db) s11 s21 s22 20 25 30 35 40 1.2 1.5 1.8 2.1 2.4 2.7 3 +25c +85c -40c frequency (ghz) gain (db) 20 25 30 35 40 1.2 1.5 1.8 2.1 2.4 2.7 3 +25c +85c -40c frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 1.2 1.5 1.8 2.1 2.4 2.7 3 +25c +85c -40c frequency (ghz) return loss (db) -20 -15 -10 -5 0 1.2 1.5 1.8 2.1 2.4 2.7 3 +25c +85c -40c frequency (ghz) return loss (db) -80 -60 -40 -20 0 1.2 1.5 1.8 2.1 2.4 2.7 3 +25c +85c -40c frequency (ghz) isolation (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 p1db vs. temperature [1] [2] psat vs. temperature [1] [2] HMC719LP4 / 719lp4e v04.0610 gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz output ip3 and idd vs. supply voltage @ 1700 mhz [3] output ip3 vs. temperature [1] [2] noise figure vs. temperature [1] [2] output ip3 and idd vs. supply voltage @ 2200 mhz [3] 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 1.2 1.5 1.8 2.1 2.4 2.7 3 vdd=5v vdd=3v frequency (ghz) noise figure (db) +85c +25c -40c 25 30 35 40 45 50 1.2 1.5 1.8 2.1 2.4 2.7 3 +25c +85c -40c frequency (ghz) ip3 (dbm) vdd=5v vdd=3v 12 14 16 18 20 22 24 26 1.2 1.5 1.8 2.1 2.4 2.7 3 +25c +85c -40c frequency (ghz) p1db (dbm) vdd=5v vdd=3v 12 14 16 18 20 22 24 26 1.2 1.5 1.8 2.1 2.4 2.7 3 +25c +85c -40c frequency (ghz) p1db (dbm) vdd=5v vdd=3v 15 20 25 30 35 40 45 0 50 100 150 200 250 300 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 idd1 idd2 ip3 (dbm) idd (ma) voltage supply (v) [1] vdd = 5v, r bias = 1.5k [2] vdd = 3v, r bias = 1.5k [3] r bias = 1.5k 15 20 25 30 35 40 45 0 50 100 150 200 250 300 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 idd1 idd2 ip3 (dbm) idd (ma) voltage supply (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 power compression @ 2200 mhz [1] HMC719LP4 / 719lp4e v04.0610 gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz power compression @ 2200 mhz [2] power compression @ 1700 mhz [1] power compression @ 1700 mhz [2] [1] vdd = 5v, r bias = 1.5k [2] vdd = 3v, r bias = 1.5k [3] r bias = 1.5k gain, power & noise figure vs. supply voltage @ 1700 mhz [3] gain, power & noise figure vs. supply voltage @ 2200 mhz [3] -5 0 5 10 15 20 25 30 35 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 10 15 20 25 30 35 40 45 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v) 10 15 20 25 30 35 40 45 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v) -5 0 5 10 15 20 25 30 35 -30 -27 -24 -21 -18 -15 -12 -9 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -5 0 5 10 15 20 25 30 35 40 -30 -27 -24 -21 -18 -15 -12 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -5 0 5 10 15 20 25 30 35 40 -29 -26 -23 -20 -17 -14 -11 -8 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 HMC719LP4 / 719lp4e v04.0610 gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz output ip3 vs. rbias @ 1900 mhz gain, noise figure & rbias @ 1900 mhz 30 32 34 36 38 40 1 10 100 1000 10000 vdd=3v vdd=5v rbias (ohms) ip3 (dbm) 25 27 29 31 33 35 0.8 1 1.2 1.4 1.6 1.8 100 1000 10000 vdd=3v vdd=5v gain (db) noise figure (db) rbias (ohms)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 absolute maximum ratings drain bias voltage (vdd) 5.5 v rf input p ower ( rfin) (vdd = +5 vdc) -5 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 21.2 m w /c above 85 c) 1.9 w thermal r esistance (channel to ground paddle) 47.3 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s vdd (v) idd1 (ma) idd2 (ma) 2.7 22 150 3.0 33 154 3.3 44 155 4.5 87 163 5.0 104 168 5.5 121 169 note: amplifer will operate over full voltage ranges shown above. typical supply current vs. vdd (rbias = 1.5k) vdd (v) rbias idd1 (ma) idd2 (ma) min max r ecommended 3v 1k [1] o pen circuit 1k 27 154 1.5k 33 154 10k 46 154 5v 0 o pen circuit 120 70 168 470 88 168 1.5k 104 168 [1] o peration with vdd= 3v and rbias < 1k o hm may result in the part becoming conditionally stable which is not recommended. absolute bias resistor range & recommended bias resistor values for idd HMC719LP4 / 719lp4e v04.0610 gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 HMC719LP4 / 719lp4e v04.0610 gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz outline drawing p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c719 lp 4 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] h719 xxxx h m c719 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h719 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n. package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 HMC719LP4 / 719lp4e v04.0610 gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz pin number f unction description i nterface schematic 1, 3 - 5, 7 - 16, 18, 20, 22 n/c no connection necessary. these pins may be connected to rf /dc ground without affecting performance. 2 rfin this pin is dc coupled and matched to 50 o hms. 6 res this pin is used to set the dc current of the amplifer by selection of external bias resistor. s ee application circuit. 17 rfout rf output and dc bia s for the second amplifer. s ee application circuit for off-chip components. 19 rfin2 this pin is dc coupled. an off-chip dc blocking capacitor is required. 21 rfout1 this pin is matched to 50 o hms. 23, 24 vdd1, 2 p ower s upply voltage for the frst amplifer. e xternal bypass capacitors are required. s ee application circuit. pin descriptions
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 9 HMC719LP4 / 719lp4e v04.0610 gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 10 evaluation pcb list of materials for evaluation pcb 121242 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. HMC719LP4 / 719lp4e v04.0610 gaas phemt mmic high ip3 low noise amplifier, 1.3 - 2.9 ghz i tem description j1 - j3 p cb m ount sm a connector j4 - j5 2mm vertical m olex connector c1, c8, c12 220 p f capacitor, 0402 p kg. c3 10 n f capacitor, 0402 p kg. c4, c7, c11 10 n f capacitor, 0603 p kg. c5, c6, c13 1000 p f capacitor, 0603 p kg. c10 4.7 u f capacitor, 0805 p kg. l 2 22 nh i nductor, 0402 p kg. l 3 6.8 nh i nductor, 0603 p kg. l 4 47 nh i nductor, 0603 p kg. r 1 1.5 k o hm r bias r esistor, 0402 p kg. r 2, r 3 0 o hm r esistor, 0402 p kg. u1 h m c719 lp 4( e ) amplifer p cb [2] 121126 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: arlon 25 rf
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